SI3529DV-T1-E3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI3529DV-T1-E3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N/P-CH 40V 2.5A 6-TSOP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| F E T Type | N and P-Channel |
| Power Max | 1.4W |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Vgsth Max Id | 3V @ 250µA |
| Package Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 125 mOhm @ 2.2A, 10V |
| Gate Charge Qg Max Vgs | 7nC @ 10V |
| Detailed Description | Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 6-TSOP |
| Drainto Source Voltage Vdss | 40V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 205pF @ 20V |
| Current Continuous Drain Id25 C | 2.5A, 1.95A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |