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Manufacturer Image
SI1922EDH-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI1922EDH-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 20V 1.3A SOT-363
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
F E T Type 2 N-Channel (Dual)
Power Max 1.25W
Packaging Cut Tape (CT)
F E T Feature Logic Level Gate
Other Names SI1922EDH-T1-GE3CT
Vgsth Max Id 1V @ 250µA
Package Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Rds On Max Id Vgs 198 mOhm @ 1A, 4.5V
Base Part Number SI1922
Gate Charge Qg Max Vgs 2.5nC @ 8V
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package SC-70-6 (SOT-363)
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Continuous Drain Id25 C 1.3A
Moisture Sensitivity Level M S L 1 (Unlimited)

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