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Manufacturer Image
NTMD6601NR2G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number NTMD6601NR2G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 80V 1.1A 8SOIC
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
F E T Type 2 N-Channel (Dual)
Power Max 600mW
Packaging Tape & Reel (TR)
F E T Feature Logic Level Gate
Vgsth Max Id 3V @ 250µA
Package Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Rds On Max Id Vgs 215 mOhm @ 2.2A, 10V
Gate Charge Qg Max Vgs 15nC @ 10V
Detailed Description Mosfet Array 2 N-Channel (Dual) 80V 1.1A 600mW Surface Mount 8-SOIC
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SOIC
Drainto Source Voltage Vdss 80V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 400pF @ 25V
Current Continuous Drain Id25 C 1.1A
Moisture Sensitivity Level M S L 1 (Unlimited)

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