FDMS3686S
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDMS3686S |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET 2N-CH 30V 13A/23A 8-PQFN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | PowerTrench® |
| F E T Type | 2 N-Channel (Dual) Asymmetrical |
| Power Max | 1W |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Other Names | FDMS3686S-ND FDMS3686STR |
| Vgsth Max Id | 2.7V @ 250µA |
| Package Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 8 mOhm @ 13A, 10V |
| Gate Charge Qg Max Vgs | 29nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | Power56 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1785pF @ 10V |
| Current Continuous Drain Id25 C | 13A, 23A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |