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FDMS3660S

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDMS3660S
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 30V 13A/30A 8-PQFN
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series PowerTrench®
F E T Type 2 N-Channel (Dual) Asymmetrical
Power Max 1W
Packaging Tape & Reel (TR)
F E T Feature Logic Level Gate
Other Names FDMS3660SFSTR
Vgsth Max Id 2.7V @ 250µA
Package Case 8-PowerTDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 8 mOhm @ 13A, 10V
Base Part Number FDMS3660S
Gate Charge Qg Max Vgs 29nC @ 10V
Detailed Description Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 30A 1W Surface Mount Power56
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package Power56
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1765pF @ 15V
Current Continuous Drain Id25 C 13A, 30A
Moisture Sensitivity Level M S L 1 (Unlimited)

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