FDMQ8203
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDMQ8203 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET 2N/2P-CH 100V/80V 12-MLP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | GreenBridge™ PowerTrench® |
| F E T Type | 2 N and 2 P-Channel (H-Bridge) |
| Power Max | 2.5W |
| Packaging | Cut Tape (CT) |
| F E T Feature | Logic Level Gate |
| Other Names | FDMQ8203CT |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | 12-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 110 mOhm @ 3A, 10V |
| Base Part Number | FDMQ8203 |
| Gate Charge Qg Max Vgs | 5nC @ 10V |
| Detailed Description | Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 12-MLP (5x4.5) |
| Drainto Source Voltage Vdss | 100V, 80V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 210pF @ 50V |
| Current Continuous Drain Id25 C | 3.4A, 2.6A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |