FDMD8900
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDMD8900 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET 2N-CH 30V POWER |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 2.1W |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Standard |
| Other Names | FDMD8900TR |
| Vgsth Max Id | 2.5V @ 250µA |
| Package Case | 12-PowerWDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 4 mOhm @ 19A, 10V |
| Gate Charge Qg Max Vgs | 35nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 12-Power3.3x5 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2605pF @ 15V |
| Current Continuous Drain Id25 C | 19A, 17A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |