FDMD84100
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FDMD84100 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET 2N-CH 100V 7A 8-PQFN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | PowerTrench® |
| F E T Type | 2 N-Channel (Dual) Common Source |
| Power Max | 2.1W |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Standard |
| Other Names | FDMD84100TR |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 20 mOhm @ 7A, 10V |
| Gate Charge Qg Max Vgs | 16nC @ 10V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Source 100V 7A 2.1W Surface Mount Power 3.3x5 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | Power 3.3x5 |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 980pF @ 50V |
| Current Continuous Drain Id25 C | 7A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |