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Manufacturer Image
FDD3510H

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number FDD3510H
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series PowerTrench®
F E T Type N and P-Channel, Common Drain
Power Max 1.3W
Packaging Original-Reel®
F E T Feature Logic Level Gate
Other Names FDD3510HDKR
Vgsth Max Id 4V @ 250µA
Package Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type Surface Mount
Rds On Max Id Vgs 80 mOhm @ 4.3A, 10V
Gate Charge Qg Max Vgs 18nC @ 10V
Detailed Description Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-252-4L
Drainto Source Voltage Vdss 80V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 800pF @ 40V
Current Continuous Drain Id25 C 4.3A, 2.8A
Moisture Sensitivity Level M S L 1 (Unlimited)

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