EPC2110ENGRT
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
English
English
Deutsch
Français
Español
Italiano
中文
हिन्दी
Lietuviškai
Images are for reference only. See Product Specifications for product details.
| Part Number | EPC2110ENGRT |
| Manufacturer | EPC |
| Description | TRANS GAN 2N-CH 120V BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | eGaN® |
| F E T Type | 2 N-Channel (Dual) Common Source |
| Packaging | Tape & Reel (TR) |
| F E T Feature | GaNFET (Gallium Nitride) |
| Other Names | 917-EPC2110ENGRTR EPC2110ENGR |
| Vgsth Max Id | 2.5V @ 700µA |
| Package Case | Die |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 60 mOhm @ 4A, 5V |
| Gate Charge Qg Max Vgs | 0.8nC @ 5V |
| Detailed Description | 356224 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Supplier Device Package | Die |
| Drainto Source Voltage Vdss | 120V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 80pF @ 60V |
| Current Continuous Drain Id25 C | 3.4A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |