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EPC2110ENGRT

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2110ENGRT
Manufacturer EPC
Description TRANS GAN 2N-CH 120V BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Dual) Common Source
Packaging Tape & Reel (TR)
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-EPC2110ENGRTR EPC2110ENGR
Vgsth Max Id 2.5V @ 700µA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 60 mOhm @ 4A, 5V
Gate Charge Qg Max Vgs 0.8nC @ 5V
Detailed Description 356224
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 120V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 80pF @ 60V
Current Continuous Drain Id25 C 3.4A
Moisture Sensitivity Level M S L 1 (Unlimited)

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