EPC2108ENGRT
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | EPC2108ENGRT |
| Manufacturer | EPC |
| Description | TRANS GAN 3N-CH BUMPED DIE |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
| Series | eGaN® |
| Rds On Max Id Vgs | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Packaging | Original-Reel® |
| Package Case | 9-VFBGA |
| Other Names | 917-EPC2108ENGRDKR |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Input Capacitance Ciss Max Vds | 22pF @ 30V, 7pF @ 30V |
| Gate Charge Qg Max Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| F E T Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| F E T Feature | GaNFET (Gallium Nitride) |
| Drainto Source Voltage Vdss | 60V, 100V |
| Detailed Description | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
| Current Continuous Drain Id25 C | 1.7A, 500mA |