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EPC2108ENGRT

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Product Details

Part Number EPC2108ENGRT
Manufacturer EPC
Description TRANS GAN 3N-CH BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package 9-BGA (1.35x1.35)
Series eGaN®
Rds On Max Id Vgs 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Packaging Original-Reel®
Package Case 9-VFBGA
Other Names 917-EPC2108ENGRDKR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
Input Capacitance Ciss Max Vds 22pF @ 30V, 7pF @ 30V
Gate Charge Qg Max Vgs 0.22nC @ 5V, 0.044nC @ 5V
F E T Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
F E T Feature GaNFET (Gallium Nitride)
Drainto Source Voltage Vdss 60V, 100V
Detailed Description Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Current Continuous Drain Id25 C 1.7A, 500mA

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