Product Image
EPC2106

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2106
Manufacturer EPC
Description TRANS GAN SYM 100V BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 600µA
Supplier Device Package Die
Series eGaN®
Rds On Max Id Vgs 70 mOhm @ 2A, 5V
Packaging Tape & Reel (TR)
Package Case Die
Other Names 917-1110-2
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
Input Capacitance Ciss Max Vds 75pF @ 50V
Gate Charge Qg Max Vgs 0.73nC @ 5V
F E T Type 2 N-Channel (Half Bridge)
F E T Feature GaNFET (Gallium Nitride)
Drainto Source Voltage Vdss 100V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
Current Continuous Drain Id25 C 1.7A

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us