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EPC2106

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2106
Manufacturer EPC
Description TRANS GAN SYM 100V BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Tape & Reel (TR)
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-1110-2
Vgsth Max Id 2.5V @ 600µA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 70 mOhm @ 2A, 5V
Gate Charge Qg Max Vgs 0.73nC @ 5V
Detailed Description 343751
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 75pF @ 50V
Current Continuous Drain Id25 C 1.7A
Moisture Sensitivity Level M S L 1 (Unlimited)

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