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EPC2105ENG

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2105ENG
Manufacturer EPC
Description TRANS GAN 2N-CH 80V BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Bulk
F E T Feature GaNFET (Gallium Nitride)
Other Names EPC2105ENGR 917-EPC2105ENG EPC2105ENGR EPC2105ENGRH4
Vgsth Max Id 2.5V @ 2.5mA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 14.5 mOhm @ 20A, 5V
Gate Charge Qg Max Vgs 2.5nC @ 5V
Detailed Description 337452
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 80V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 300pF @ 40V
Current Continuous Drain Id25 C 9.5A, 38A
Moisture Sensitivity Level M S L 1 (Unlimited)

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