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EPC2105ENG

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Product Details

Part Number EPC2105ENG
Manufacturer EPC
Description TRANS GAN 2N-CH 80V BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 2.5mA
Supplier Device Package Die
Series eGaN®
Rds On Max Id Vgs 14.5 mOhm @ 20A, 5V
Packaging Bulk
Package Case Die
Other Names EPC2105ENGR 917-EPC2105ENG EPC2105ENGR EPC2105ENGRH4
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
Input Capacitance Ciss Max Vds 300pF @ 40V
Gate Charge Qg Max Vgs 2.5nC @ 5V
F E T Type 2 N-Channel (Half Bridge)
F E T Feature GaNFET (Gallium Nitride)
Drainto Source Voltage Vdss 80V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
Current Continuous Drain Id25 C 9.5A, 38A

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