EPC2105
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | EPC2105 |
| Manufacturer | EPC |
| Description | TRANS GAN ASYMMETRICAL HALF BRID |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 2.5V @ 2.5mA, 2.5V @ 10mA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On Max Id Vgs | 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V |
| Packaging | Original-Reel® |
| Package Case | Die |
| Other Names | 917-1185-6 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Input Capacitance Ciss Max Vds | 300pF @ 40V, 1100pF @ 40V |
| Gate Charge Qg Max Vgs | 2.5nC @ 5V, 10nC @ 5V |
| F E T Type | 2 N-Channel (Half Bridge) |
| F E T Feature | GaNFET (Gallium Nitride) |
| Drainto Source Voltage Vdss | 80V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die |
| Current Continuous Drain Id25 C | 9.5A, 38A |