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EPC2105

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2105
Manufacturer EPC
Description TRANS GAN ASYMMETRICAL HALF BRID
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Original-Reel®
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-1185-6
Vgsth Max Id 2.5V @ 2.5mA, 2.5V @ 10mA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Gate Charge Qg Max Vgs 2.5nC @ 5V, 10nC @ 5V
Detailed Description 337452
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 80V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 300pF @ 40V, 1100pF @ 40V
Current Continuous Drain Id25 C 9.5A, 38A
Moisture Sensitivity Level M S L 1 (Unlimited)

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