• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
EPC2102ENG

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2102ENG
Manufacturer EPC
Description TRANS GAN 2N-CH 60V BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Tray
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-EPC2102ENG EPC2102ENGRH6
Vgsth Max Id 2.5V @ 7mA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 4.4 mOhm @ 20A, 5V
Gate Charge Qg Max Vgs 6.8nC @ 5V
Detailed Description 337488
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 830pF @ 30V
Current Continuous Drain Id25 C 23A
Moisture Sensitivity Level M S L 1 (Unlimited)

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us