EPC2102ENG
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | EPC2102ENG |
| Manufacturer | EPC |
| Description | TRANS GAN 2N-CH 60V BUMPED DIE |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On Max Id Vgs | 4.4 mOhm @ 20A, 5V |
| Packaging | Tray |
| Package Case | Die |
| Other Names | 917-EPC2102ENG EPC2102ENGRH6 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Input Capacitance Ciss Max Vds | 830pF @ 30V |
| Gate Charge Qg Max Vgs | 6.8nC @ 5V |
| F E T Type | 2 N-Channel (Half Bridge) |
| F E T Feature | GaNFET (Gallium Nitride) |
| Drainto Source Voltage Vdss | 60V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 60V 23A Surface Mount Die |
| Current Continuous Drain Id25 C | 23A |