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EPC2101ENGRT

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2101ENGRT
Manufacturer EPC
Description TRANS GAN ASYMMETRICAL HALF BRID
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Cut Tape (CT)
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-EPC2101ENGRCT
Vgsth Max Id 2.5V @ 2mA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 11.5 mOhm @ 20A, 5V
Gate Charge Qg Max Vgs 2.7nC @ 5V
Detailed Description 337891
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 300pF @ 30V
Current Continuous Drain Id25 C 9.5A, 38A
Moisture Sensitivity Level M S L 1 (Unlimited)

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