Product Image
EPC2101

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2101
Manufacturer EPC
Description TRANS GAN ASYMMETRICAL HALF BRID
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package Die
Series eGaN®
Rds On Max Id Vgs 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V
Packaging Tape & Reel (TR)
Package Case Die
Other Names 917-1181-2
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
Input Capacitance Ciss Max Vds 300pF @ 30V, 1200pF @ 30V
Gate Charge Qg Max Vgs 2.7nC @ 5V, 12nC @ 5V
F E T Type 2 N-Channel (Half Bridge)
F E T Feature GaNFET (Gallium Nitride)
Drainto Source Voltage Vdss 60V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die
Current Continuous Drain Id25 C 9.5A, 38A

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us