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EPC2100ENGRT

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Product Details

Part Number EPC2100ENGRT
Manufacturer EPC
Description MOSFET 2 N-CH 30V 9.5A/38A DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package Die
Series eGaN®
Rds On Max Id Vgs 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Packaging Tape & Reel (TR)
Package Case Die
Other Names 917-EPC2100ENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
Input Capacitance Ciss Max Vds 475pF @ 15V, 1960pF @ 15V
Gate Charge Qg Max Vgs 4.9nC @ 15V, 19nC @ 15V
F E T Type 2 N-Channel (Half Bridge)
F E T Feature GaNFET (Gallium Nitride)
Drainto Source Voltage Vdss 30V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die
Current Continuous Drain Id25 C 10A (Ta), 40A (Ta)

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