• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
EPC2100ENG

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2100ENG
Manufacturer EPC
Description TRANS GAN 2N-CH 30V BUMPED DIE
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Tray
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-EPC2100ENG EPC2100ENGR_H1 EPC2100ENGRH1
Vgsth Max Id 2.5V @ 4mA, 2.5V @ 16mA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Gate Charge Qg Max Vgs 4.9nC @ 15V, 19nC @ 15V
Detailed Description 343947
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 475pF @ 15V, 1960pF @ 15V
Current Continuous Drain Id25 C 10A (Ta), 40A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us