EPC2100ENG
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | EPC2100ENG |
| Manufacturer | EPC |
| Description | TRANS GAN 2N-CH 30V BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | eGaN® |
| F E T Type | 2 N-Channel (Half Bridge) |
| Packaging | Tray |
| F E T Feature | GaNFET (Gallium Nitride) |
| Other Names | 917-EPC2100ENG EPC2100ENGR_H1 EPC2100ENGRH1 |
| Vgsth Max Id | 2.5V @ 4mA, 2.5V @ 16mA |
| Package Case | Die |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
| Gate Charge Qg Max Vgs | 4.9nC @ 15V, 19nC @ 15V |
| Detailed Description | 343947 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Supplier Device Package | Die |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 475pF @ 15V, 1960pF @ 15V |
| Current Continuous Drain Id25 C | 10A (Ta), 40A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |