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EPC2100

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number EPC2100
Manufacturer EPC
Description TRANS GAN ASYMMETRICAL HALF BRID
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
Series eGaN®
F E T Type 2 N-Channel (Half Bridge)
Packaging Tape & Reel (TR)
F E T Feature GaNFET (Gallium Nitride)
Other Names 917-1180-2
Vgsth Max Id 2.5V @ 4mA, 2.5V @ 16mA
Package Case Die
Mounting Type Surface Mount
Rds On Max Id Vgs 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Gate Charge Qg Max Vgs 4.9nC @ 15V, 19nC @ 15V
Detailed Description 343947
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package Die
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 475pF @ 15V, 1960pF @ 15V
Current Continuous Drain Id25 C 10A (Ta), 40A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)

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