DMN2022UNS-7
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | DMN2022UNS-7 |
| Manufacturer | Diodes Incorporated |
| Description | MOSFET 2 N-CH 20V POWERDI3333-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 2 N-Channel (Dual) Common Drain |
| Power Max | 1.2W |
| Packaging | Cut Tape (CT) |
| F E T Feature | Standard |
| Other Names | DMN2022UNS-7DICT |
| Vgsth Max Id | 1V @ 250µA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 10.8 mOhm @ 4A, 4.5V |
| Gate Charge Qg Max Vgs | 20.3nC @ 4.5V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerDI3333-8 |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1870pF @ 10V |
| Current Continuous Drain Id25 C | 10.7A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |