DMN2019UTS-13
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | DMN2019UTS-13 |
| Manufacturer | Diodes Incorporated |
| Description | MOSFET 2N-CH 20V 5.4A TSSOP-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 2 N-Channel (Dual) Common Drain |
| Power Max | 780mW |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Other Names | DMN2019UTS-13DITR DMN2019UTS13 |
| Vgsth Max Id | 950mV @ 250µA |
| Package Case | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 18.5 mOhm @ 7A, 10V |
| Base Part Number | DMN2019 |
| Gate Charge Qg Max Vgs | 8.8nC @ 4.5V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.4A 780mW Surface Mount 8-TSSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 8-TSSOP |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 143pF @ 10V |
| Current Continuous Drain Id25 C | 5.4A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |