DMN2014LHAB-7
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | DMN2014LHAB-7 |
| Manufacturer | Diodes Incorporated |
| Description | MOSFET 2N-CH 20V 9A 6-UDFN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | 2 N-Channel (Dual) |
| Power Max | 800mW |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Logic Level Gate |
| Other Names | DMN2014LHAB-7DITR |
| Vgsth Max Id | 1.1V @ 250µA |
| Package Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 13 mOhm @ 4A, 4.5V |
| Gate Charge Qg Max Vgs | 16nC @ 4.5V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) 20V 9A 800mW Surface Mount U-DFN2030-6 (Type B) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | U-DFN2030-6 (Type B) |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1550pF @ 10V |
| Current Continuous Drain Id25 C | 9A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |