JAN2N5666S
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | JAN2N5666S |
| Manufacturer | Microsemi |
| Description | TRANS NPN 200V 5A TO39 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Series | Military, MIL-PRF-19500/455 |
| Power Max | 1.2W |
| Packaging | Bulk |
| Other Names | 1086-21066 1086-21066-MIL |
| Package Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Detailed Description | Bipolar (BJT) Transistor NPN 200V 5A 1.2W Through Hole TO-39 (TO-205AD) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation Max Ib Ic | 1V @ 5A, 1A |
| Current Collector Ic Max | 5A |
| Supplier Device Package | TO-39 (TO-205AD) |
| D C Current Gainh F E Min Ic Vce | 40 @ 1A, 5V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Current Collector Cutoff Max | 200nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 200V |