2SD2206A(T6SEP,F,M
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Invent, Innovate, Integrate
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| Part Number | 2SD2206A(T6SEP,F,M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS NPN 2A 120V TO226-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 900mW |
| Packaging | Bulk |
| Other Names | 2SD2206A(T6SEPFM 2SD2206AT6SEPFM |
| Package Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Detailed Description | Bipolar (BJT) Transistor NPN 120V 2A 900mW Through Hole TO-92MOD |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 1.5V @ 1mA, 1A |
| Current Collector Ic Max | 2A |
| Supplier Device Package | TO-92MOD |
| D C Current Gainh F E Min Ic Vce | 2000 @ 1A, 2V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 120V |