2SD2096T114E
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2SD2096T114E |
| Manufacturer | LAPIS Semiconductor |
| Description | TRANS NPN 60V 3A HRT/TO-220FP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 1.8W |
| Packaging | Cut Tape (CT) |
| Other Names | 2SD2096T114ECT |
| Package Case | HRT |
| Mounting Type | Through Hole |
| Base Part Number | 2SD2096 |
| Transistor Type | NPN |
| Detailed Description | Bipolar (BJT) Transistor NPN 60V 3A 8MHz 1.8W Through Hole HRT |
| Frequency Transition | 8MHz |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 1V @ 200mA, 2A |
| Current Collector Ic Max | 3A |
| Supplier Device Package | HRT |
| D C Current Gainh F E Min Ic Vce | 100 @ 500mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 10µA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 60V |