2SB906-Y(TE16L1,NQ
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Images are for reference only. See Product Specifications for product details.
| Part Number | 2SB906-Y(TE16L1,NQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS PNP 60V 3A PW-MOLD |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 1W |
| Packaging | Cut Tape (CT) |
| Other Names | 2SB906-Y(Q) 2SB906-Y(Q)-ND 2SB906-Y(TE16L1,NQ) 2SB906-Y(TE16L1,NQCT 2SB906-Y(TE16L1NQ) 2SB906-Y(TE16L1NQ)-ND 2SB906-Y(TE16L1NQ-ND 2SB906-Y(TE16L1NQCT 2SB906Y(TE16L1NQ 2SB906Y(TE16L1NQ-ND 2SB906YTE16L1NQ |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Detailed Description | Bipolar (BJT) Transistor PNP 60V 3A 9MHz 1W Surface Mount PW-MOLD |
| Frequency Transition | 9MHz |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 1.7V @ 300mA, 3A |
| Current Collector Ic Max | 3A |
| Supplier Device Package | PW-MOLD |
| D C Current Gainh F E Min Ic Vce | 100 @ 500mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100µA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 60V |