2SA1382,T6MIBF(J
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2SA1382,T6MIBF(J |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS PNP 2A 50V TO226-3 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 900mW |
| Packaging | Bulk |
| Other Names | 2SA1382T6MIBF(J 2SA1382T6MIBFJ |
| Package Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Detailed Description | Bipolar (BJT) Transistor PNP 50V 2A 110MHz 900mW Through Hole TO-92MOD |
| Frequency Transition | 110MHz |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 500mV @ 33mA, 1A |
| Current Collector Ic Max | 2A |
| Supplier Device Package | TO-92MOD |
| D C Current Gainh F E Min Ic Vce | 150 @ 500mA, 2V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100nA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |