2N2907AE4
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2N2907AE4 |
| Manufacturer | Microsemi |
| Description | DIE TRANS PNP MED PWR GEN PURP T |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 500mW |
| Ro H S Status | RoHS Compliant |
| Package Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Detailed Description | Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18 |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation Max Ib Ic | 1.6V @ 50mA, 500mA |
| Current Collector Ic Max | 600mA |
| Supplier Device Package | TO-18 |
| D C Current Gainh F E Min Ic Vce | 100 @ 150mA, 10V |
| Lead Free Status Ro H S Status | RoHS Compliant |
| Current Collector Cutoff Max | 10µA (ICBO) |
| Voltage Collector Emitter Breakdown Max | 60V |