RN1409,LF
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RN1409,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS PREBIAS NPN 50V 0.2W SMINI |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Power Max | 200mW |
| Packaging | Tape & Reel (TR) |
| Other Names | RN1409(TE85L,F) RN1409(TE85LF)TR RN1409(TE85LF)TR-ND RN1409,LF(B RN1409,LF(T RN1409LF(BTR RN1409LF(BTR-ND RN1409LFTR |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Resistor Base R1 | 47 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini |
| Frequency Transition | 250MHz |
| Vce Saturation Max Ib Ic | 300mV @ 250µA, 5mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 22 kOhms |
| Supplier Device Package | S-Mini |
| D C Current Gainh F E Min Ic Vce | 70 @ 10mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |