RN1401,LF
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RN1401,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS PREBIAS NPN 0.2W S-MINI |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Power Max | 200mW |
| Packaging | Tape & Reel (TR) |
| Other Names | ASRN1401,LF RN1401,LF(B RN1401,LF(T RN1401LFTR RN1401S,LF RN1401SLF RN1401SLFTR RN1401SLFTR-ND |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Base Part Number | RN140* |
| Resistor Base R1 | 4.7 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini |
| Frequency Transition | 250MHz |
| Vce Saturation Max Ib Ic | 300mV @ 250µA, 5mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 4.7 kOhms |
| Supplier Device Package | S-Mini |
| D C Current Gainh F E Min Ic Vce | 30 @ 10mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |