RN1118MFV,L3F
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RN1118MFV,L3F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | X34 PB-F VESM TRANSISTOR PD 150M |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Power Max | 150mW |
| Other Names | RN1118MFVL3F |
| Package Case | SOT-723 |
| Mounting Type | Surface Mount |
| Resistor Base R1 | 47 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM |
| Frequency Transition | 250MHz |
| Vce Saturation Max Ib Ic | 300mV @ 250µA, 5mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 10 kOhms |
| Supplier Device Package | VESM |
| D C Current Gainh F E Min Ic Vce | 50 @ 10mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Voltage Collector Emitter Breakdown Max | 50V |