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MMUN2232LT1G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number MMUN2232LT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 246MW SOT23-3
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single, Pre-Biased
Power Max 246mW
Packaging Tape & Reel (TR)
Other Names MMUN2232LT1GOS MMUN2232LT1GOS-ND MMUN2232LT1GOSTR
Package Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Base Part Number MMUN22**L
Resistor Base R1 4.7 kOhms
Transistor Type NPN - Pre-Biased
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Vce Saturation Max Ib Ic 250mV @ 1mA, 10mA
Current Collector Ic Max 100mA
Resistor Emitter Base R2 4.7 kOhms
Supplier Device Package SOT-23-3 (TO-236)
D C Current Gainh F E Min Ic Vce 15 @ 5mA, 10V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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