MMUN2211LT1G
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | MMUN2211LT1G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS PREBIAS NPN 246MW SOT23-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Power Max | 246mW |
| Packaging | Tape & Reel (TR) |
| Other Names | MMUN2211LT1GOS MMUN2211LT1GOS-ND MMUN2211LT1GOSTR |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Base Part Number | MMUN22**L |
| Resistor Base R1 | 10 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) |
| Vce Saturation Max Ib Ic | 250mV @ 300µA, 10mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 10 kOhms |
| Supplier Device Package | SOT-23-3 (TO-236) |
| D C Current Gainh F E Min Ic Vce | 35 @ 5mA, 10V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |