FJN3305RTA
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FJN3305RTA |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS PREBIAS NPN 300MW TO92-3 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Power Max | 300mW |
| Packaging | Tape & Box (TB) |
| Other Names | FJN3305RTA-ND FJN3305RTATB |
| Package Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type | Through Hole |
| Base Part Number | FJN3305 |
| Resistor Base R1 | 4.7 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3 |
| Frequency Transition | 250MHz |
| Vce Saturation Max Ib Ic | 300mV @ 500µA, 10mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 10 kOhms |
| Supplier Device Package | TO-92-3 |
| D C Current Gainh F E Min Ic Vce | 30 @ 5mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100nA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |