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NESG7030M04-A

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number NESG7030M04-A
Manufacturer CEL (California Eastern Laboratories)
Description DISCRETE RF DIODE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - RF
Gain 14dB ~ 21dB
Power Max 125mW
Packaging Bulk
Other Names NESG7030M04A
Package Case SOT-343F
Mounting Type Surface Mount
Transistor Type NPN
Noise Figured B Typf 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Detailed Description 353776
Frequency Transition 5.8GHz
Operating Temperature 150°C (TJ)
Current Collector Ic Max 30mA
Supplier Device Package M04
D C Current Gainh F E Min Ic Vce 200 @ 5mA, 2V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 4.3V

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