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Manufacturer Image
NE85639-T1-R27-A

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number NE85639-T1-R27-A
Manufacturer CEL (California Eastern Laboratories)
Description SAME AS 2SC4093 NPN SILICON AMPL
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - RF
Gain 13dB
Power Max 200mW
Packaging Tape & Reel (TR)
Package Case TO-253-4, TO-253AA
Mounting Type Surface Mount
Transistor Type NPN
Noise Figured B Typf 1.1dB @ 1GHz
Detailed Description 352332
Frequency Transition 9GHz
Operating Temperature 150°C (TJ)
Current Collector Ic Max 100mA
Supplier Device Package SOT-143
D C Current Gainh F E Min Ic Vce 50 @ 20mA, 10V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 12V

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