MT3S113TU,LF
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | MT3S113TU,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | RF SIGE HETEROJUNCTION BIPOLAR N |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - RF |
| Gain | 12.5dB |
| Power Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Other Names | MT3S113TU,LF(B MT3S113TULF MT3S113TULF(B MT3S113TULFTR |
| Package Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Noise Figured B Typf | 1.45dB @ 1GHz |
| Detailed Description | RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM |
| Frequency Transition | 11.2GHz |
| Operating Temperature | 150°C (TJ) |
| Current Collector Ic Max | 100mA |
| Supplier Device Package | UFM |
| D C Current Gainh F E Min Ic Vce | 200 @ 30mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 5.3V |