HN3C10FUTE85LF
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | HN3C10FUTE85LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANSISTOR NPN US6 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - RF |
| Gain | 11.5dB |
| Power Max | 200mW |
| Packaging | Cut Tape (CT) |
| Other Names | HN3C10FUTE85LFCT |
| Package Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Noise Figured B Typf | 1.1dB @ 1GHz |
| Detailed Description | RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6 |
| Frequency Transition | 7GHz |
| Current Collector Ic Max | 80mA |
| Supplier Device Package | US6 |
| D C Current Gainh F E Min Ic Vce | 80 @ 20mA, 10V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 12V |