ULN2803APG,CN
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | ULN2803APG,CN |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS 8NPN DARL 50V 0.5A 18DIP |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays |
| Power Max | 1.47W |
| Packaging | Tube |
| Other Names | ULN2803APG ULN2803APG(5,M) ULN2803APG(CNHZN) ULN2803APG(CNHZN)-ND ULN2803APG(O,M) ULN2803APG(O,N,HZA ULN2803APG(O,N,HZN ULN2803APG(OM) ULN2803APG(OM)-ND ULN2803APG(ONHZA ULN2803APG(ONHZA-ND ULN2803APG(ONHZN ULN2803APG(ONHZN-ND ULN2803APG-ND ULN2803APGCN ULN2803APGONHZN |
| Package Case | 18-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Base Part Number | ULN280*A |
| Transistor Type | 8 NPN Darlington |
| Detailed Description | Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Vce Saturation Max Ib Ic | 1.6V @ 500µA, 350mA |
| Current Collector Ic Max | 500mA |
| Supplier Device Package | 18-DIP |
| D C Current Gainh F E Min Ic Vce | 1000 @ 350mA, 2V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |