HN3C51F-GR(TE85L,F
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | HN3C51F-GR(TE85L,F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS 2NPN 120V 0.1A SM6 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays |
| Power Max | 300mW |
| Packaging | Original-Reel® |
| Other Names | HN3C51F-GR(TE85LF)DKR HN3C51F-GR(TE85LF)DKR-ND HN3C51F-GR(TE85LFDKR |
| Package Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Detailed Description | Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6 |
| Frequency Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 300mV @ 1mA, 10mA |
| Current Collector Ic Max | 100mA |
| Supplier Device Package | SM6 |
| D C Current Gainh F E Min Ic Vce | 200 @ 2mA, 6V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100nA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 120V |