HN1C01FE-GR,LF
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | HN1C01FE-GR,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS 2NPN 50V 0.15A ES6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays |
| Power Max | 100mW |
| Packaging | Tape & Reel (TR) |
| Other Names | HN1C01FE-GR (5L,F,T HN1C01FE-GR(5L,F,T HN1C01FE-GR(5LFTTR HN1C01FE-GR(5LFTTR-ND HN1C01FE-GR,LF(B HN1C01FE-GR,LF(T HN1C01FE-GRLFTR |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Detailed Description | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6 |
| Frequency Transition | 80MHz |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 250mV @ 10mA, 100mA |
| Current Collector Ic Max | 150mA |
| Supplier Device Package | ES6 |
| D C Current Gainh F E Min Ic Vce | 200 @ 2mA, 6V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100nA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |