HN1B01FU-GR,LF
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | HN1B01FU-GR,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS NPN/PNP 50V 0.15A US6-PLN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays |
| Power Max | 200mW, 210mW |
| Packaging | Tape & Reel (TR) |
| Other Names | HN1B01FU-GR(L,F,T) HN1B01FU-GR,LF(B HN1B01FU-GR,LF(T HN1B01FU-GRLF HN1B01FU-GRLF-ND HN1B01FU-GRLFTR HN1B01FUGRLFT HN1B01FUGRLFTTR HN1B01FUGRLFTTR-ND |
| Package Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN, PNP |
| Detailed Description | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6 |
| Frequency Transition | 150MHz |
| Operating Temperature | 125°C (TJ) |
| Vce Saturation Max Ib Ic | 250mV @ 10mA, 100mA |
| Current Collector Ic Max | 150mA |
| Supplier Device Package | US6 |
| D C Current Gainh F E Min Ic Vce | 200 @ 2mA, 6V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100nA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |