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Product Image
HN1B01FU-GR,LF

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HN1B01FU-GR,LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 50V 0.15A US6-PLN
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays
Power Max 200mW, 210mW
Packaging Tape & Reel (TR)
Other Names HN1B01FU-GR(L,F,T) HN1B01FU-GR,LF(B HN1B01FU-GR,LF(T HN1B01FU-GRLF HN1B01FU-GRLF-ND HN1B01FU-GRLFTR HN1B01FUGRLFT HN1B01FUGRLFTTR HN1B01FUGRLFTTR-ND
Package Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Transistor Type NPN, PNP
Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6
Frequency Transition 150MHz
Operating Temperature 125°C (TJ)
Vce Saturation Max Ib Ic 250mV @ 10mA, 100mA
Current Collector Ic Max 150mA
Supplier Device Package US6
D C Current Gainh F E Min Ic Vce 200 @ 2mA, 6V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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