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HBDM60V600W-7

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HBDM60V600W-7
Manufacturer Diodes Incorporated
Description TRANS NPN/PNP 65V/60V SOT363
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays
Power Max 200mW
Packaging Tape & Reel (TR)
Other Names HBDM60V600W7 HBDM60V600WDITR
Package Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Base Part Number HBDM60V600
Transistor Type NPN, PNP
Detailed Description 350293
Frequency Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Vce Saturation Max Ib Ic 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current Collector Ic Max 500mA, 600mA
Supplier Device Package SOT-363
D C Current Gainh F E Min Ic Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 65V, 60V

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