RN4981,LF(CT
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RN4981,LF(CT |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS NPN/PNP PREBIAS 0.2W US6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Power Max | 200mW |
| Other Names | RN4981(T5L,F,T) RN4981(T5LFT)TR RN4981(T5LFT)TR-ND RN4981LF(CTTR RN4981T5LFT |
| Ro H S Status | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Polarization | 6-TSSOP, SC-88, SOT-363 |
| Voltage Breakdown | US6 |
| Noise Figured B Typf | 4.7k |
| Resistor Base R1 Ohms | 250MHz, 200MHz |
| Expanded Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6 |
| Frequency Transition | 30 @ 10mA, 5V |
| Vce Saturation Max Ib Ic | 50V |
| Current Collector Ic Max | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Manufacturer Part Number | RN4981,LF(CT |
| D C Current Gainh F E Min Ic Vce | 100µA (ICBO) |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 300mV @ 250µA, 5mA |
| Resistor Emitter Base R2 Ohms | 4.7k |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 100mA |