RN4902FE,LF(CT
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RN4902FE,LF(CT |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS NPN/PNP PREBIAS 0.1W ES6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Power Max | 100mW |
| Packaging | Tape & Reel (TR) |
| Other Names | RN4902FE,LF(CB RN4902FELF(CTTR |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Resistor Base R1 | 10 kOhms |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6 |
| Frequency Transition | 250MHz, 200MHz |
| Vce Saturation Max Ib Ic | 300mV @ 250µA, 5mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 10 kOhms |
| Supplier Device Package | ES6 |
| D C Current Gainh F E Min Ic Vce | 50 @ 10mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |