PQMD10Z
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | PQMD10Z |
| Manufacturer | Nexperia |
| Description | TRANS NPN/PNP RET 6DFN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Series | Automotive, AEC-Q101 |
| Power Max | 230mW |
| Packaging | Tape & Reel (TR) |
| Other Names | 1727-2709-2 568-13230-2 568-13230-2-ND 934069747147 PQMD10Z-ND |
| Package Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Resistor Base R1 | 2.2 kOhms |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 230mW Surface Mount DFN1010B-6 |
| Frequency Transition | 230MHz, 180MHz |
| Vce Saturation Max Ib Ic | 100mV @ 250µA, 5mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 47 kOhms |
| Supplier Device Package | DFN1010B-6 |
| D C Current Gainh F E Min Ic Vce | 100 @ 10mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 1µA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |