NSVMUN5312DW1T2G
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | NSVMUN5312DW1T2G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS NPN/PNP 50V BIPO SC88-6 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Power Max | 250mW |
| Packaging | Tape & Reel (TR) |
| Other Names | NSVMUN5312DW1T2G-ND NSVMUN5312DW1T2GOSTR |
| Package Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Resistor Base R1 | 22 kOhms |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
| Vce Saturation Max Ib Ic | 250mV @ 300µA, 10mA |
| Current Collector Ic Max | 100mA |
| Resistor Emitter Base R2 | 22 kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| D C Current Gainh F E Min Ic Vce | 60 @ 5mA, 10V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |