MUN5113DW1T1G
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | MUN5113DW1T1G |
| Manufacturer | 4D Systems |
| Description | TRANS 2PNP PREBIAS 0.25W SOT363 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Power Max | 250mW |
| Other Names | MUN5113DW1T1G-ND MUN5113DW1T1GOSTR |
| Ro H S Status | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Polarization | 6-TSSOP, SC-88, SOT-363 |
| Voltage Breakdown | SC-88/SC70-6/SOT-363 |
| Noise Figured B Typf | 47k |
| Expanded Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
| Frequency Transition | 80 @ 5mA, 10V |
| Vce Saturation Max Ib Ic | 50V |
| Current Collector Ic Max | 2 PNP - Pre-Biased (Dual) |
| Manufacturer Part Number | MUN5113DW1T1G |
| D C Current Gainh F E Min Ic Vce | 500nA |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 250mV @ 300µA, 10mA |
| Resistor Emitter Base R2 Ohms | 47k |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 100mA |