TRS6E65C,S1AQ
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TRS6E65C,S1AQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | DIODE SCHOTTKY 650V 6A TO220-2L |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Other Names | TRS6E65C,S1AQ(S TRS6E65C,S1Q TRS6E65C,S1Q(S TRS6E65CS1AQ TRS6E65CS1AQ(S TRS6E65CS1Q TRS6E65CS1Q-ND |
| Ro H S Status | Tube |
| Mounting Type | Through Hole |
| Polarization | TO-220-2 |
| Resistance If F | 35pF @ 650V, 1MHz |
| Capacitance Vr F | 175°C (Max) |
| Voltage Breakdown | TO-220-2L |
| Diode Configuration | 90µA @ 650V |
| Expanded Description | Diode Silicon Carbide Schottky 650V 6A (DC) Through Hole TO-220-2L |
| Voltage Forward Vf Max If | 6A (DC) |
| Voltage Peak Reverse Max | Silicon Carbide Schottky |
| Manufacturer Part Number | TRS6E65C,S1AQ |
| Reverse Recovery Timetrr | No Recovery Time > 500mA (Io) |
| Current Reverse Leakage Vr | 1.7V @ 6A |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | 0ns |
| Current Average Rectified Ioper Diode | 650V |