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Product Image
TRS6E65C,S1AQ

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TRS6E65C,S1AQ
Manufacturer Toshiba Semiconductor and Storage
Description DIODE SCHOTTKY 650V 6A TO220-2L
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Diodes - Rectifiers - Single
Other Names TRS6E65C,S1AQ(S TRS6E65C,S1Q TRS6E65C,S1Q(S TRS6E65CS1AQ TRS6E65CS1AQ(S TRS6E65CS1Q TRS6E65CS1Q-ND
Ro H S Status Tube
Mounting Type Through Hole
Polarization TO-220-2
Resistance If F 35pF @ 650V, 1MHz
Capacitance Vr F 175°C (Max)
Voltage Breakdown TO-220-2L
Diode Configuration 90µA @ 650V
Expanded Description Diode Silicon Carbide Schottky 650V 6A (DC) Through Hole TO-220-2L
Voltage Forward Vf Max If 6A (DC)
Voltage Peak Reverse Max Silicon Carbide Schottky
Manufacturer Part Number TRS6E65C,S1AQ
Reverse Recovery Timetrr No Recovery Time > 500mA (Io)
Current Reverse Leakage Vr 1.7V @ 6A
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Operating Temperature Junction 0ns
Current Average Rectified Ioper Diode 650V

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